Abstract
The relative importance of the contribution of two mechanisms, that of the change in the collection of photocurrent carriers and that of the shift of the edge of fundamental absorption of light in strong electric fields in Schottky photodiodes, to the observed spectral dependence of the avalanche photocurrent is asessed.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 83–86, December, 1985.
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Babak, A.K., Kil'chitskaya, S.S., Strikha, V.I. et al. Investigation of avalanche photocurrent at the edge of fundamental absorption band in Schottky diodes. Soviet Physics Journal 28, 1022–1025 (1985). https://doi.org/10.1007/BF00899098
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DOI: https://doi.org/10.1007/BF00899098