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Thermal instability of peak current in tunnel diodes

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The effect of temperature change on stability of electrical characteristics of GaAs and GaSb tunnel diodes is studied. It is shown that thermal stresses developed at the boundary between the electrode alloy and the semiconductor lead to deformations (plastic and creep), localized mainly in the electrode layer. These deformations are sensed by the p-n junction which lies close to the phase boundary, which leads to a relaxation of peak current, and its hysteresis-type temperature dependence.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    A. P. Vyatkin & Yu. M. Kalinin

Authors
  1. A. P. Vyatkin
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  2. Yu. M. Kalinin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 77–82, December, 1985.

We express our gratitude to N. P. Krivorotov for his interest in the study and valuable discussion.

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Vyatkin, A.P., Kalinin, Y.M. Thermal instability of peak current in tunnel diodes. Soviet Physics Journal 28, 1018–1022 (1985). https://doi.org/10.1007/BF00899097

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  • DOI: https://doi.org/10.1007/BF00899097

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