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Trapping centers and recombination in pyrolytic boron nitride

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Abstract

The methods of fractional thermoluminescence and thermally stimulated currents are used to study the energy and kinetic parameters of trapping and recombination centers of pyrolytic boron nitride. Three types of monoenergetic traps with energies of 0.55, 0.85, and 1.05 eV are detected against the background of a quasicontinuous distribution of additional levels. A scheme of recombination processes is put together on the basis of measurements of the sign of the carriers, x-ray luminescence, and thermoluminescence spectra. The correlation of the activation energies, frequency factors, and the luminescence and conduction distributions confirmed that an electron-hole mechanism is responsible for the electrotransport with a predominant contribution from holes.

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Authors and Affiliations

  1. High-Voltage Scientific-Research Institute, USSR

    Yu. I. Galanov, F. V. Konusov & V. V. Lopatin

  2. S. M. Kirov Polytechnic Institute, Tomsk

    Yu. I. Galanov, F. V. Konusov & V. V. Lopatin

Authors
  1. Yu. I. Galanov
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  2. F. V. Konusov
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  3. V. V. Lopatin
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 72–76, November, 1989.

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Galanov, Y.I., Konusov, F.V. & Lopatin, V.V. Trapping centers and recombination in pyrolytic boron nitride. Soviet Physics Journal 32, 926–929 (1989). https://doi.org/10.1007/BF00898966

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  • DOI: https://doi.org/10.1007/BF00898966

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