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Influence of light on the bulk charge in a dielectric under exposure to electrons

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Abstract

Singularities of the charge transfer during exposure of a dielectric with an open surface to an electron beam in the presence of light are investigated. Within the framework of a quasi-free carrier models a general expression is obtained that describes the transition potential of the open surface under a jumplike change in exposure conditions. Experiments are conducted displaying the applicability of the quasi-free carrier model to charge transport under conditions of multiple trapping and preferred photoliberation of carriers.

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Authors and Affiliations

  1. Introscopy Scientific Research Institute, USSR

    A. I. Sergeev & N. I. Yagushkin

  2. S. M. Kirov Tomsk Polytechnic Institute, USSR

    A. I. Sergeev & N. I. Yagushkin

Authors
  1. A. I. Sergeev
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  2. N. I. Yagushkin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 62–67, November, 1989.

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Sergeev, A.I., Yagushkin, N.I. Influence of light on the bulk charge in a dielectric under exposure to electrons. Soviet Physics Journal 32, 918–922 (1989). https://doi.org/10.1007/BF00898964

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  • DOI: https://doi.org/10.1007/BF00898964

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