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Soviet Physics Journal

, Volume 20, Issue 10, pp 1340–1344 | Cite as

Calculation of the impurity distribution for diffusion in a solid crystal with inhomogeneous layers

  • Yu. F. Blinov
  • A. G. Zakharov
  • Yu. I. Molchanov
  • D. A. Sechenov
Article
  • 16 Downloads

Abstract

A solution is obtained for the diffusion from a constant source at a surface in a solid crystal with an inhomogeneity in the form of a layer with high diffusion coefficient of arbitrary thickness. The expressions obtained may be used, depending on the choice of the inhomogeneous layer thickness, to investigate surface diffusion or diffusion at grain boundaries or dislocations.

Keywords

Diffusion Coefficient Layer Thickness Surface Diffusion High Diffusion Impurity Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

  1. 1.
    N. A. Kolobov and M. M. Samokhvalov, Diffusion and Oxidation of Semiconductors [in Russian], Metallurgiya, Moscow (1975).Google Scholar
  2. 2.
    J. C. Fisher, J. Appl. Phys.,22, 74 (1951).Google Scholar
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    R. T. P. Whipple, Phil. Mag.,45, 1225 (1954).Google Scholar
  4. 4.
    G. V. Dudko, M. A. Kolegaev, and V. A. Panteleev, Fiz. Tverd. Tela,11, No. 5, 1356 (1969).Google Scholar

Copyright information

© Plenum Publishing Corporation 1978

Authors and Affiliations

  • Yu. F. Blinov
    • 1
  • A. G. Zakharov
    • 1
  • Yu. I. Molchanov
    • 1
  • D. A. Sechenov
    • 1
  1. 1.Taganrog Radioengineering InstituteUSSR

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