Abstract
The technology of producing single-crystal layers of Ge on nonorienting substrates is described. The distribution of the electrophysical properties across the surface and through the thickness of the layers at temperatures of 77 and 300°K are reported. It is shown that up to a thickness of d ≲ 2μ the layers have uniformly distributed properties.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 26–31, May, 1973.
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Klimenko, É.A., Klimenko, A.G., Kravchenko, A.F. et al. Some features of the electrophysical properties of p-Ge layers produced on nonorienting substrates. Soviet Physics Journal 16, 614–618 (1973). https://doi.org/10.1007/BF00898794
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DOI: https://doi.org/10.1007/BF00898794