Abstract
The change in the main parameters of indium arsenide with the introduction of tellurium is considered from weak doping to concentrations corresponding to the solubility limit. Analysis of the experimental data shows that the functional dependence on the electron density of the band gap width, the Fermi energy, the magnitude of background absorption, the parameter characteristic of the carrier scattering mechanism has a discontinuity at N=(3–5) · 1018 cm−3. The observed phenomena are explained by the redistribution of component atoms of the system between sublattices with the formation of an ordered phase.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 51–57, May, 1984.
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Semikolenova, N.A. Anomalous changes in the properties of tellurium-doped indium arsenide single crystals. Soviet Physics Journal 27, 394–399 (1984). https://doi.org/10.1007/BF00898609
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DOI: https://doi.org/10.1007/BF00898609