Abstract
Carrier lifetime in a semiconductor is calculated for capture in shallow Coulomb impurities with energy transfer to local center oscillations. The situation is considered in which the trap depth ɛI=Ry*/2 is less than the local phonon energy and the temperature is low: T ≪ ɛI. The electron-phonon interaction is accomplished by change in the dipole component of the impurity potential or the short distance component of its potential. Under certain conditions this mechanism can be more effective than the cascade mechanism.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 37–39, May, 1984.
In conclusion we wish to thank S. D. Beneslavskii for much advice and V. L. Bonch-Bruevich for his valuable remarks.
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Dmitriev, A.V., Davidova, I.E. Charge carrier capture on semiconductor Coulomb centers with excitation of local center oscillations. Soviet Physics Journal 27, 383–385 (1984). https://doi.org/10.1007/BF00898606
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DOI: https://doi.org/10.1007/BF00898606