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Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2

  • Physics of Semiconductors and Dielectrics
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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    G. A. Aleksandrova, I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva, P. B. Paschenko & A. E. Shubin

Authors
  1. G. A. Aleksandrova
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  2. I. V. Ivonin
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  3. L. M. Krasil'nikova
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  4. L. G. Lavrent'eva
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  5. P. B. Paschenko
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  6. A. E. Shubin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 32–36, May, 1984.

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Aleksandrova, G.A., Ivonin, I.V., Krasil'nikova, L.M. et al. Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2 . Soviet Physics Journal 27, 379–383 (1984). https://doi.org/10.1007/BF00898605

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  • DOI: https://doi.org/10.1007/BF00898605

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