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Soviet Physics Journal

, Volume 27, Issue 5, pp 365–368 | Cite as

Degradation and breakdown in anodic tantalum oxide

  • V. A. Laléko
  • V. P. Malinenko
  • G. B. Stefanovich
  • T. V. Shmidt
Physics of Semiconductors and Dielectrics

Abstract

The influence is considered of a strong electrical field on the electrical characteristics of anodic tantalum oxide in MOS- and MOM-structures. It is shown that the action of strong electrical fields results in irreversible changes in the conductivity of a dielectric due to spectrum transformations of localized states in the Ta2O5 forbidden band. A correlation is noted between the field dependences of the breakdown delay time and the rate of development of the degradation processes.

Keywords

Oxide Delay Time Localize State Tantalum Degradation Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1984

Authors and Affiliations

  • V. A. Laléko
    • 1
  • V. P. Malinenko
    • 1
  • G. B. Stefanovich
    • 1
  • T. V. Shmidt
    • 1
  1. 1.O. V. Kuusinen Petrozavodsk State UniversityUSSR

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