Soviet Physics Journal

, Volume 27, Issue 5, pp 365–368 | Cite as

Degradation and breakdown in anodic tantalum oxide

  • V. A. Laléko
  • V. P. Malinenko
  • G. B. Stefanovich
  • T. V. Shmidt
Physics of Semiconductors and Dielectrics


The influence is considered of a strong electrical field on the electrical characteristics of anodic tantalum oxide in MOS- and MOM-structures. It is shown that the action of strong electrical fields results in irreversible changes in the conductivity of a dielectric due to spectrum transformations of localized states in the Ta2O5 forbidden band. A correlation is noted between the field dependences of the breakdown delay time and the rate of development of the degradation processes.


Oxide Delay Time Localize State Tantalum Degradation Process 
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Copyright information

© Plenum Publishing Corporation 1984

Authors and Affiliations

  • V. A. Laléko
    • 1
  • V. P. Malinenko
    • 1
  • G. B. Stefanovich
    • 1
  • T. V. Shmidt
    • 1
  1. 1.O. V. Kuusinen Petrozavodsk State UniversityUSSR

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