Abstract
The effect of the pulverization method and the degree of dispersion on the photoluminescence spectrum, the temperature dependence of luminescence, the thermostimulated luminescence, the kinetics of light storage, and the law of afterglow of the crystal phosphor ZnS:Ga is investigated. Analysis of all the results obtained shows that the pulverization method is most substantially manifested in thermoluminescence in the form of additional peaks of thermally stimulated luminescence (TSL) due to the appearance during pulverization of groups of traps with a depth of 0.22–0.24 eV. The origin of these traps is discussed. It is shown that a process associated with the generation of dislocations during pulverization is most effective in the formation of electron traps.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 10–14, May, 1984.
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Birkle, G.V.B., Gavrilov, F.F. & Pol'kin, V.M. Effect of the method and degree of pulverization on the photoluminescence of ZnS crystals. Soviet Physics Journal 27, 361–365 (1984). https://doi.org/10.1007/BF00898600
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DOI: https://doi.org/10.1007/BF00898600