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Theory of the Cotton-Mouton effect for shallow F centers

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

A theory for the Cotton-Mouton effect involving local centers in ionic semiconductors with an intermediate polaron binding is derived by the path-integral method of nonrelativistic quantum mechanics. The dissipative properties of the impurity-phonon system are analyzed by the method of a nonequilibrium density matrix. The system is described in a zeroth approximation by a trial Lagrangian in which the Coulomb interaction of an impurity electron with a defect and with lattice vibrations is simulated by elastic forces. In first order in the difference between the exact and trial Lagrangians, an expression is derived for that component of the admittance tensor of the system which determines the Cotton -Mouton constant. The Cotton-Mouton constant is plotted against the frequency of the incident light for several semiconductors.

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Authors and Affiliations

  1. V. I. Lenin Kishinev State University, USSR

    Sh. N. Gifeisman & Yu. G. Malkoch

Authors
  1. Sh. N. Gifeisman
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  2. Yu. G. Malkoch
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 3–6, May, 1984.

We wish to thank Yu. E. Perlin for interest in this study and for some stimulating discussions.

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Gifeisman, S.N., Malkoch, Y.G. Theory of the Cotton-Mouton effect for shallow F centers. Soviet Physics Journal 27, 355–357 (1984). https://doi.org/10.1007/BF00898598

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  • DOI: https://doi.org/10.1007/BF00898598

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