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Soviet Physics Journal

, Volume 34, Issue 10, pp 917–922 | Cite as

Nonlinear voltage-temperature characteristics of submicron semiconductor layers

  • G. N. Logvinov
Physics of Semiconductors and Dielectrics
  • 15 Downloads

Abstract

Voltage-temperature characteristics (VTC) of current carriers in semiconductor layers that are substantially narrower than the bulk cooling length are constructed in the temperature approximation. The nature of the VTC nonlinearity is shown to crucially depend on the ratio of the bulk to the surface energy relaxation lengths of electrons. Because these lengths depend on the electron temperature, with changing external electric fields, the contributions of these surface and bulk scattering mechanisms to energy relaxation processes may vary, leading to visible changes of VTC.

In conclusion, the author would like to express his gratitude to Yu. G. Gurevich for a fruitful discussion of the results of this work.

Keywords

Surface Energy Relaxation Process Electron Temperature External Electric Field Visible Change 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1992

Authors and Affiliations

  • G. N. Logvinov
    • 1
  1. 1.Ya. A. Galan Pedagogical InstituteTernopol

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