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Temperature dependence of the electron effective mass in MnxHg1−xSe

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

We have investigated the temperature dependence of the electron effective mass in MnxHg1−xSe crystals (0 < x ⩽ 0.1) in the T=90–300 K temperature range. We have determined that the temperature-dependent changes in the band gap (εg), in the band diagram nonparabolicity, and in the conduction band carrier concentration have a strong effect on the temperature dependence of the carrier effective mass at the Fermi level mξ *=f(T).

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Authors and Affiliations

  1. Chernovtsy State University, USSR

    P. D. Mar'yanchuk & N. P. Gavaleshko

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  1. P. D. Mar'yanchuk
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  2. N. P. Gavaleshko
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 5–9, November, 1987.

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Mar'yanchuk, P.D., Gavaleshko, N.P. Temperature dependence of the electron effective mass in MnxHg1−xSe. Soviet Physics Journal 30, 903–906 (1987). https://doi.org/10.1007/BF00898506

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  • DOI: https://doi.org/10.1007/BF00898506

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