Abstract
The transient currents and stationary current-voltage characteristics of Ta-Ta2Q5-MnO2 systems with negative tantalum polarity are considered. It is shown that in this case space-charge limited currents flow through the system with an exponential distribution of the trap energy when there are deep donor centers. In the intensefield region the Poole-Frenkel effect begins to have an important effect on the injection currents. An appropriate theory is developed.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 94–97, May, 1981.
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Laleko, V.A., Odynets, L.L. & Raikerus, P.A. Electrical relaxation and the strong-field effect when injection currents are present in metal-oxide-semiconductor systems. Soviet Physics Journal 24, 475–478 (1981). https://doi.org/10.1007/BF00898415
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DOI: https://doi.org/10.1007/BF00898415