Soviet Physics Journal

, Volume 34, Issue 4, pp 322–324 | Cite as

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

  • A. I. Andrushko
  • Kh. M. Salikhov
  • S. V. Slobodchikov
Physics of Semiconductors and Dielectrics
  • 14 Downloads

Abstract

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs1−x−ySbxPy crystals (x=0.06, y=0.11) with n0 = 8·1015 and 3·1016 cm−3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative τR, Auger recombination τA, and recombination through centers with Ef=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with τRA = τRτA/(τR + τA), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n0≤1014 cm−3.

Keywords

Recombination Auger Recombination Process Recombination Center Current Carrier 

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Copyright information

© Plenum Publishing Corporation 1991

Authors and Affiliations

  • A. I. Andrushko
    • 1
  • Kh. M. Salikhov
    • 1
  • S. V. Slobodchikov
    • 1
  1. 1.Artillery Marshall M. N. Chistyakov Kazan VVKIU RVUSSR

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