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Dissipative structures in laminar semiconductors

  • Solid State Physics
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Soviet Physics Journal Aims and scope

Abstract

A laminar electron semiconductor consisting of two branches is considered: passive (with a single-valued homogeneous current-voltage characteristic (CVC), and active (with an S-shaped overheated CVC). The self-consistent nonlinear problem is solved about seeking the dissipative structures (DS), the electron temperature strata and current filaments, that occur in the sandwich under consideration. The system bifurcation characteristics are found. The appearance of DS on the CVC of each of the branches and the specimen as a whole is studied.

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Authors and Affiliations

  1. Institute of Radiophysics and Electronics, Academy of Sciences of the Ukrainian SSR, Ukraine

    A. I. Vakser

Authors
  1. A. I. Vakser
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 63–70, October, 1985.

The author is grateful to F. G. Bass, Yu. G. Gurevich, and V. S. Bochkov for discussing the results of the research.

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Vakser, A.I. Dissipative structures in laminar semiconductors. Soviet Physics Journal 28, 821–827 (1985). https://doi.org/10.1007/BF00897958

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  • DOI: https://doi.org/10.1007/BF00897958

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