Conclusions
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1.
The above calculation of the temperature range of oriented growth of carbides and Sulfides on the basis of the thermodynamics and kinetics of chemepitaxial nucleation and growth of a new phase during reaction diffusion makes it possible, with a certain accuracy, to determine the possibility of epitaxial growth of carbides and Sulfides on crystalline substrates.
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2.
When comparatively large mismatches exist between the lattice of the new phase (GeS and FeS) and the substrate lattice oriented growth of products during reaction diffusion can be observed only for sufficiently high supersaturations of the parent phase with the diffusing component.
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Literature cited
L. S. Palatnik and I. I. Papirov, Oriented Crystallization [in Russian], Metallurgiya, Moscow (1964).
L. S. Palatnik and I. I. Papirov, Epitaxial Films [in Russian], Nauka, Moscow (1971).
M. Gebhardt, Crystal Growth: an Introduction, Amsterdam (1973), pp. 105–142.
J. Oudar, Advances in Epitaxy and Endotaxy. Selected Chemical Problems, Akadémiai Kiadó, Budapest (1976), pp. 265–297.
A. Neuhaus and M. Gebhardt, Nova Acta Leopold.,34, Suppl. No. 1, 208–249 (1968).
J. Bruckner, Krist. Techn.,8, No. 8, 923–930 (1973).
A. J. Learn and I. H. Khan, Thin Solid Films,5, No. 3, 145–155 (1970).
J.-P. Plumensi and B. C. Thomas, C. R. Acad. Sci.,C268, No. 24, 2069–2072 (1969).
P. Merle andE. Pernoux, C. R. Acad. Sei.,B280, No. 25, B801-B804 (1975).
P. I. Ignatenko, Izv. Akad. Nauk SSSR, Metally, No. 4, 54 (1979).
P. I. Ignatenko, Metallofizika, No. 74, 80 (1978).
P. I. Ignatenko, Metallofizika,3, N0. 4, 81 (1981).
L. L. Vasil'eva, Author's Abstract of Candidate's Dissertation, Novosibirsk (1972).
K. Hauffe, Reaction in Solids and On Their Surface. Part I [Russian translation], Izd. Inostr. lit., Moscow (1962).
H. Nakashima, T. Sugano, and H. Yanai, Jpn. J. Appl. Phys.,5, No. 10, 874 (1966).
D. Shaw (ed.), Atomic Diffusion in Semiconductors [Russian translation], Mir, Moscow (1975).
C. I. Mogab and H. I. Leamy, Epitaxial Growth of Β-SiC on Si: Kinetics and Growth Mechanism. “Silicon Carbide-1973”, Columbia (1974).
M. Hansen and K. Anderko, Constitution of Binary Alloys, McGraw-Hill, New York (1968).
Physicochemical Properties of Semiconducting Materials. A Handbook [in Russian], Nauka, Moscow (1978).
O. Kubaschewski and E. Evans, Thermochemistry in Metallurgy [Russian translation], Izd. Inostr. Lit., Moscow (1954).
Properties of Elements. A Handbook. Part I [in Russian], Metallurgiya, Moscow (1976).
P. I. Baranskii, V. P. Klochkov, and I. V. Potykevich, Semiconductor Electronics. A Handbook [in Russian], Naukova Dumka, Kiev (1975).
W, Missol, Surface Energy of Interfaces in Metals [Russian translation], Metallurgiya, Moscow (1978).
S. S. Gorelik, L. N. Rastorguev, and Yu. A. Skakov, X-Ray Diffraction and Electron-Optical Analysis. Applications [in Russian], Metallurgiya, Moscow (1970).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 68–70, July, 1983.
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Ignatenko, P.I. Assessment of the possibility of oriented growth of sulfides and carbides during reaction diffusion. Soviet Physics Journal 26, 635–637 (1983). https://doi.org/10.1007/BF00897640
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DOI: https://doi.org/10.1007/BF00897640