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Dislocation propagation in silicon from the edge of a precipitated Si3N4 film

  • Solid State Physics
  • Published:
Soviet Physics Journal Aims and scope

Conclusions

Local mechanical stresses in the substrate created by a break in coating continuity relax at high temperatures. As a result of the relaxation dislocations are generated and move away from the boundary. Near the boundary there are formed accumulations of dislocations in the form of a set of concentric semiloops. The distribution of the dislocation semiloops over the accumulation can be used to determine critical shear stresses. It has been established that the presence of a silicon nitride film leads to an increase in critical shear stress and braking of dislocations. As a result, dislocations in the substrate beneath the film propagate a shorter distance from the film edge than dislocations propagating in the region with no coating. It has been proposed that critical shear stress decreases with increase in the size of the dislocation loop.

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Authors and Affiliations

  1. Moscow Institute of Steels and Alloys, USSR

    S. S. Gorelik, Yu. M. Litvinov, S. P. Pavlov & A. V. Prikhod'ko

Authors
  1. S. S. Gorelik
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  2. Yu. M. Litvinov
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  3. S. P. Pavlov
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  4. A. V. Prikhod'ko
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 26–30, July, 1983.

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Gorelik, S.S., Litvinov, Y.M., Pavlov, S.P. et al. Dislocation propagation in silicon from the edge of a precipitated Si3N4 film. Soviet Physics Journal 26, 599–601 (1983). https://doi.org/10.1007/BF00897629

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  • DOI: https://doi.org/10.1007/BF00897629

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