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Photoluminescence in amorphous Ge2S3 and GexSe1−x

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Abstract

Photoluminescence from amorphous Ge2S3 and GexSe1−x has been studied at 77°K. Photoluminescence results obtained with amorphous Ge2S3 and Ge2Se3 at 4.2°K are presented here for the first time. All the semiconductors studied in this work had one broad photoluminescence band with its peak at E≈ Eg/2. A strong electron-phonon interaction in these samples is indicated by the strong exponential temperature dependence observed in the photoluminescence intensity.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Branch, Academy of Sciences of the USSR, USSR

    A. A. Babaev

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  1. A. A. Babaev
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 7–10, October, 1981.

We wish to express our deep appreciation to Academy of Sciences Corresponding Member Kh. I. Amirkhanov for useful advice during discussions of this work.

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Babaev, A.A. Photoluminescence in amorphous Ge2S3 and GexSe1−x . Soviet Physics Journal 24, 899–902 (1981). https://doi.org/10.1007/BF00897545

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  • DOI: https://doi.org/10.1007/BF00897545

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