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Soviet Physics Journal

, Volume 30, Issue 9, pp 725–729 | Cite as

Electron-microscope studies of the surface of epitaxial GaAs layers in the proximity of the (111)A face

  • I. V. Ivonin
  • S. E. Toropov
Physics of Semiconductors and Dielectrics
  • 17 Downloads

Abstract

Electron-microscope studies have been carried out on the relief of the growth surface of epitaxial gallium arsenide layers in the vicinity of the (111)A face and the quantitative characteristics of the elements of the relief have been determined: the density of growth centers on a singular face, the height of the steps, and the distances between steps in the vicinal planes. The parameters of the growth steps are shown to depend on the orientation of the face and the concentration of the growth components in the vapor phase.

Keywords

GaAs Gallium Vapor Phase Arsenide Quantitative Characteristic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

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Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • I. V. Ivonin
    • 1
  • S. E. Toropov
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk UniversityUSSR

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