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Effect of electron irradiation on excess currents of GaSb tunnel diodes

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

Forward biased currents in GaSb tunnel diodes are studied. In the excess current region four segments with differing current transfer mechanisms can be distinguished in the forward branch of the current-voltage curve (CVC) for unirradiated diodes. Irradiation by electrons with energies of 2.2 MeV produces an increase in excess current accompanied by a change in the current transfer mechanisms in the individual segments. The increase in excess current is related to formation and realignment of radiation defects which produce shallow and deep levels in the GaSb forbidden zone. Tunnel spectroscopy with irradiation was used to determine energy levels of Ec-0.060 and Ec −0.2 eV in the n-region of the p-n junction.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    Z. M. Alekseeva, A. P. Vyatkin, V. A. Glushchenko, A. P. Dmitriev, A. I. Zakharevskii & R. P. Parkhomenko

Authors
  1. Z. M. Alekseeva
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  2. A. P. Vyatkin
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  3. V. A. Glushchenko
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  4. A. P. Dmitriev
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  5. A. I. Zakharevskii
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  6. R. P. Parkhomenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 89–93, July, 1984.

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Alekseeva, Z.M., Vyatkin, A.P., Glushchenko, V.A. et al. Effect of electron irradiation on excess currents of GaSb tunnel diodes. Soviet Physics Journal 27, 620–624 (1984). https://doi.org/10.1007/BF00897462

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  • DOI: https://doi.org/10.1007/BF00897462

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