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Soviet Physics Journal

, Volume 27, Issue 7, pp 608–611 | Cite as

Interstitial type defects in implanted silicon

  • N. I. Berezhnov
  • V. F. Stel'makh
  • A. R. Chelyadinskii
Physics of Semiconductors and Dielectrics

Abstract

Silicon layers implanted with boron, lithium, phosphorus, and silicon are investigated by x-ray measurements of the lattice constant. It is established that, as a result of ion implantation in silicon, stable interstitial complexes are generated in concentrations comparable to those of vacancy type defects. The interstitial complexes are annealed in stages, viz., I at 140, II at 500°C in the case of irradiation of silicon with light ions, and I at 180, II at 560°C in crystals irradiated with medium mass ions.

Keywords

Silicon Phosphorus Lithium Boron Lattice Constant 
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Copyright information

© Plenum Publishing Corporation 1985

Authors and Affiliations

  • N. I. Berezhnov
    • 1
  • V. F. Stel'makh
    • 1
  • A. R. Chelyadinskii
    • 1
  1. 1.V. I. Lenin Belorussian State UniversityUSSR

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