Abstract
Results are presented on the distributions of the carriers and the hole mobility in undoped AlzxGa1−xAs variband films made by zone recrystallization in a temperature gradient on n-GaAs or p-GaAs crystals. It is shown that this method can give a structure of p+-n-p type with the n-p junction in the variband layer and a compensated n region.
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L. D. Van der Pauw, Phil Res. Rep.,13, No. 1, 1 (1958).
O. D. Lunina, Ph. D. Thesis, Rostov on Don (1982).
C. M. Wolf, G. E. Stillman, and E. B. Ovens, J. Electrochem. Soc.,117, 129 (1970).
V. N. Romanenko, Composition Control in Semiconductor Films [in Russian], Metallurgiya, Moscow (1978).
O. V. Emel'yanenko, T. S. Lagunova, etal., Fiz. Tekh. Poluprovodn., No. 7, 979 (1973).
V. N. Lozovskii, Zone Melting with a Temperature Gradient [in Russian], Metallurgiya, Moscow (1972).
J. R. Daile, Phys. Status Solidi,16, No. 2, 351 (1966).
A. I. Keda, L. S. Lunin, V. F. Titova, and O. D. Lunina, North Caucasus Higher School Scientific Center, Natural Science Series [in Russian],2, 42 (1975).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 63–66, July, 1984.
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Kurcheruk, V.P., Lunin, L.S., Lunina, O.D. et al. Electrophysical parameters of variband AlGaAs films made in a temperature gradient. Soviet Physics Journal 27, 598–600 (1984). https://doi.org/10.1007/BF00897456
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DOI: https://doi.org/10.1007/BF00897456