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Photocapacitance study of deep centers in ZnSe-based radiating structures

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

The photocapacitance method is used to study ZnSe-Au and ZnSe-ZnO(SiO2) barrier structures in order to investigate deep centers in ZnSe crystals annealed in liquid zinc and subjected to additional thermoprocessing in a vacuum. The energy levels of the deep centers producing photocapacitance are determined. In crystals annealed for 4.5 h acceptor levels with ionization energies of 0.28, 0.36, 0.58, and 0.71 eV are found. With increase in anealing period to 100 h only the level with ionization energy of 0.58 eV appears, leading to a decrease in intensity of the yellow-green band and an increase in intensity of blue scintillation in the electroluminescence spectra.

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Authors and Affiliations

  1. V. I. Lenin State University, Kishinev

    V. A. Korotkov, A. I. Nyaga & A. V. Simashkevich

Authors
  1. V. A. Korotkov
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  2. A. I. Nyaga
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  3. A. V. Simashkevich
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 59–63, July 1984.

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Korotkov, V.A., Nyaga, A.I. & Simashkevich, A.V. Photocapacitance study of deep centers in ZnSe-based radiating structures. Soviet Physics Journal 27, 594–597 (1984). https://doi.org/10.1007/BF00897455

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  • DOI: https://doi.org/10.1007/BF00897455

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