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Kinetics of photoconductivity in a semiconductor under strong interband optical excitation (possible stochasticity)

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Abstract

Stationary states and the kinetics of change carriers are studied in an “almost intrinsic” semiconductor containing deep levels of one kind and subjected to exposure under photon energy greater than the forbidden bandwidth. The exposure intensity is assumed sufficiently large, such that the concentration of the photoexcited charge carriers would exceed equilibrium significantly. Taken into account are both the charge carrier heating by the light and the dependence of the forbidden bandwidth on the electron and hole concentration and temperature. The conditions are mentioned for which stochastic or periodic electron and hole temperature and concentration self-oscillations should occur in the specimen.

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Authors and Affiliations

  1. M. V. Lomonosov Moscow State University, USSR

    V. L. Bonch-Bruevich

Authors
  1. V. L. Bonch-Bruevich
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Deceased.

Translated from Izvestiya Vysshikh Uchebynykh Zavedenii, Fizika, No. 6, pp. 87–95, June, 1987.

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Bonch-Bruevich, V.L. Kinetics of photoconductivity in a semiconductor under strong interband optical excitation (possible stochasticity). Soviet Physics Journal 30, 517–523 (1987). https://doi.org/10.1007/BF00897341

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  • DOI: https://doi.org/10.1007/BF00897341

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