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Characteristics of recombination processes in doped hydrated amorphous silicon films

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Abstract

The results of measurements of the temperature dependences of the dark conductivity and photoconductivity ofa-Si:H films, doped from the gas phase or by implantation of phosphorus or boron ions, as well as the effect of preillumination with white light with different duration on the photoconductivity are presented. A model is proposed for carrier recombination in doped films, taking into account the broadening of the levels of dangling bonds and the difference in the coefficients trapping of electrons and holes on neutral and charged dangling bonds. The dependence of the stationary interband photoconductivity on the equilibrium Fermi level and the appearance of the temperature-induced quenching of the photoconductivity in doped films after preillumination are studied on the basis of this model.

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Authors and Affiliations

  1. M. V. Lomonosov Moscow State University, USSR

    I. P. Zvyagin, I. A. Kurova, N. N. Ormont & K. B. Chitaya

Authors
  1. I. P. Zvyagin
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  2. I. A. Kurova
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  3. N. N. Ormont
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  4. K. B. Chitaya
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 7–17, June, 1987.

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Zvyagin, I.P., Kurova, I.A., Ormont, N.N. et al. Characteristics of recombination processes in doped hydrated amorphous silicon films. Soviet Physics Journal 30, 451–460 (1987). https://doi.org/10.1007/BF00897333

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  • DOI: https://doi.org/10.1007/BF00897333

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