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Effect of annealing on spectrum of surface electron states of silicon-nickel surface-barrier structures

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Literature cited

  1. V. I. Strikha, E. V. Buzaneva, and V. I. Radzievskii, Schottky-Barrier Semiconductor Devices [in Russian] (1974).

  2. I. D. Romanova, N. K. Maksimova, E. N. Pekarskii, and M. P. Yakubenya, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 151 (1976).

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  3. O. P. Kanchukovskii, V. A. Presnov, and E. N. Shchedrolos'ev, élektron. Tekh., Ser. Poluprovodn. Prib., No. 10, 60 (1975).

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  4. V. E. Grigor'ev, O. P. Kanchukovskii, S. B. Kazimirskii, L. V. Moroz, V. A. Presnov, and A. L. Shenkevich, Tekh. Sredstv Svyazi, Ser. Radioizmer. Tekh., No. 1, 72 (1976).

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  5. V. I. Strikha, Theoretical Foundations of Operation of the Metal-Semiconductor Contact [in Russian] (1974).

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Authors and Affiliations

  1. I. I. Mechnikov Odessa State University, USSR

    O. P. Kanchukovskii, L. V. Moroz, V. A. Presnov & A. L. Shenkevich

Authors
  1. O. P. Kanchukovskii
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  2. L. V. Moroz
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  3. V. A. Presnov
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  4. A. L. Shenkevich
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 151–152, September, 1977.

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Kanchukovskii, O.P., Moroz, L.V., Presnov, V.A. et al. Effect of annealing on spectrum of surface electron states of silicon-nickel surface-barrier structures. Soviet Physics Journal 20, 1249–1250 (1977). https://doi.org/10.1007/BF00897149

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  • DOI: https://doi.org/10.1007/BF00897149

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