Abstract
The properties of epitaxial cadmium selenide films obtained by condensation in a vacuum on mica substrates under almost equilibrium conditions are investigated. The temperature dependences of the conductivity and current carrier mobility and concentration are studied. The electron concentration in the films depended on the gas phase composition (coevaporation of CdSe + Se or CdSe + In) and varied between 5·1010cm−3 and 3.5·1018. It is shown that the current carrier scattering mechanism depends on their concentration and production conditions. For n1 ≤ 1016 cm−2 (TS≤520‡C),n2 < 1015 (TS=630‡C), scattering on intercrystallite barriers predominated. For n1 and n2 greater than the quantities mentioned, scattering by ionized defects becomes dominant. It is established that the magnitude of the intercrystallite barrier in films with 1015 < n < 1016 cm−3 is comparatively small and does not exceed ≈ 4·10−3 eV, whereupon scattering at the barriers is not explicitly manifest. Concentrations of the ionized centers, magnitudes of the intercrystallite barriers, and ionization energies of the donor levels are determined for films obtained under different conditions.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 98–103, September, 1977.
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Bogomolov, N.S., Ezhovskii, Y.K. & Kalinkin, I.P. Features of current carrier scattering in epitaxial films. Soviet Physics Journal 20, 1200–1204 (1977). https://doi.org/10.1007/BF00897129
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DOI: https://doi.org/10.1007/BF00897129