This is a preview of subscription content, log in via an institution to check access.
Literature cited
Yu. A. Tarantov, E. V. Kas'yanenko, P. P. Konorov, and V. é. Ptitsyn, in: Electronic Processes on Surface of Semiconductors and on a Semiconductor-Dielectric Interface [in Russian], Novosibirsk (1974), p. 169.
P. V. Gray and D. M. Brown, Appl. Phys. Lett.,8, 31 (1966).
M. Kuhn, Sol. St. Electron.,13, 873 (1970).
P. F. Schmidt and D. R. Wonsidler, J. Electrochem. Soc.,114, 603 (1967).
S. P. Sinitsa and V. A. Gritsenko, in: Electronic Processes on Surface of Semiconductors and on a Semiconductor-Dielectric Interface [in Russian], Novosibirsk (1974), p. 139.
P. F. Schmidt and M. J. Rand, Solid State Commun.,4, 169 (1966).
E. W. Muller and T. T. Tsong, Field Ion Microscopy, American Elsevier, New York (1969).
P. F. Schmidt and J. D. Ashner, J. Electrochem. Soc.,118, 325 (1971).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 46–50, September, 1977.
Rights and permissions
About this article
Cite this article
Tarantov, Y.A., Kas'yanenko, E.V., Konorov, P.P. et al. Ionic processes in dielectric layers on silicon surface and their effect on electrophysical properties of silicon-dielectric boundary. Soviet Physics Journal 20, 1156–1159 (1977). https://doi.org/10.1007/BF00897119
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00897119