Skip to main content
SpringerLink
Log in

Influence of electron-phonon interaction in doped silicon crystals on the root-mean-square dynamic displacement of atoms

  • Published:
Soviet Physics Journal Aims and scope

Abstract

The root-mean-square dynamic displacements (\(\begin{array}{*{20}c} -- \\ {u^2 } \\ \end{array} _{dyn} \)) of silicon atoms in single-crystals doped with phosphorus, arsenic, antimony, boron, gallium, and indium are determined experimentally. Characteristic concentration dependences of\(\begin{array}{*{20}c} -- \\ {u^2 } \\ \end{array} _{dyn} \) are obtained for boron- and phosphorus-doped silicon. A number of experimental facts indicating the existence of electron-phonon interaction in comparison with results in the literature, which are the results of an investigation of the same phenomenon by other methods, is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. P. I. Baranskii and A. I. Elizarov, Phys. Stat. Solidi (b),53, K45 (1972).

    Google Scholar 

  2. V. M. Beilin, Yu. Kh. Vekilov, and O. M. Krasil'nikov, Fiz. Tekh. Poluprovodn.,3, 1430 (1969).

    Google Scholar 

  3. T. A. Fieldly, F. Cerdeira, and M. Cardona, Phys. Rev. Sect. B.,8, 4723 (1973).

    Google Scholar 

  4. I. Ipatova and A. Subashiev, Solid State Commun.,16, 1047 (1975).

    Google Scholar 

  5. M. D. Kapustina, V. A. Panteleev, L. V. Lainer, and N. F. Khokhlov, Fiz. Tverd. Tela,17, 1363 (1975).

    Google Scholar 

  6. E. P. Konyaeva, V. T. Bublik, and S. S. Gorelik, Abstracts of Reports. Second Conference on the Physicochemical Principles of Doping Semiconductor Materials [in Russian], Moscow (1972).

  7. G. M. Kucher and K. B. Tolpygo, Chemical Bonds in Crystals [in Russian], Nauka i Tekhnika, Minsk (1969), p. 143.

    Google Scholar 

  8. W. Sasaki, S. Ikehata, and S. Kobayashi, J. Phys. Soc. Jpn.,36, 1377 (1974).

    Google Scholar 

  9. H. Fritzsache, J. Phys. Chem. Solids,6, 69 (1959).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. N. I. Lobachevskii Gor'kii State University, USSR

    M. D. Kapustina, V. A. Panteleev & T. Yu. Markova

Authors
  1. M. D. Kapustina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. A. Panteleev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Yu. Markova
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 13–17, September, 1977.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kapustina, M.D., Panteleev, V.A. & Markova, T.Y. Influence of electron-phonon interaction in doped silicon crystals on the root-mean-square dynamic displacement of atoms. Soviet Physics Journal 20, 1128–1131 (1977). https://doi.org/10.1007/BF00897111

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00897111

Keywords

Search

Navigation