Soviet Physics Journal

, Volume 32, Issue 1, pp 62–65 | Cite as

Kinetic coefficients of semiconductors and resonance scattering of current carriers

  • S. D. Beneslavskii
  • N. S. Salimov
Physics of Semiconductors and Dielectrics
  • 11 Downloads

Abstract

We calculate the kinetic characteristics of a semiconductor in which the current carriers are resonantly scattered by quasilocalized impurity states. We show that, at low temperatures, the majority of these quantities have a highly nonmonotonic dependence on the energy difference between the Fermi level and the resonance energy. The maximum values of these coefficients are much higher than in the non-resonance case.

Keywords

Fermi Level Energy Difference Resonance Energy Kinetic Characteristic Impurity State 

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Copyright information

© Plenum Publishing Corporation 1989

Authors and Affiliations

  • S. D. Beneslavskii
    • 1
  • N. S. Salimov
    • 1
  1. 1.M. V. Lomonosov Moscow State UniversityUSSR

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