Kinetic coefficients of semiconductors and resonance scattering of current carriers
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We calculate the kinetic characteristics of a semiconductor in which the current carriers are resonantly scattered by quasilocalized impurity states. We show that, at low temperatures, the majority of these quantities have a highly nonmonotonic dependence on the energy difference between the Fermi level and the resonance energy. The maximum values of these coefficients are much higher than in the non-resonance case.
KeywordsFermi Level Energy Difference Resonance Energy Kinetic Characteristic Impurity State
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