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Properties of epitaxial layers of p-type germanium-doped gallium arsenide

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

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Abstract

The electrophysical properties and cathode-luminescence(CL) spectra of p-type layers of GaAs〈Ge〉 with p=1.8·1017–3.6·1019 cm−3 obtained by the method of liquid-phase expitaxy for a Ge content in the solution of 0.4–12 at. % were investigated. Regularities are set up for the change in the Hall constant, the Hall hole mobility, and the CL spectra as a function of the impurity concentration and temperature, which are explained from the viewpoint of an impurity zone mode. On the basis of the data obtained it is assumed that the material properties studied are determined by the impurity centers GeAs and (GeGa-VGa).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    E. V. Malisova, M. P. Nikiforova & S. S. Khludkov

Authors
  1. E. V. Malisova
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  2. M. P. Nikiforova
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  3. S. S. Khludkov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 65–69, January, 1989.

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Malisova, E.V., Nikiforova, M.P. & Khludkov, S.S. Properties of epitaxial layers of p-type germanium-doped gallium arsenide. Soviet Physics Journal 32, 54–57 (1989). https://doi.org/10.1007/BF00896735

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  • DOI: https://doi.org/10.1007/BF00896735

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