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Influence of thermal processing on the properties of Sn-doped GaAs epitaxial layers

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

The influence of annealing at a temperature of 750–830°C on the electrophysical, luminescent, and structural characteristics of GaAs layers doped with various concentrations of tin is studied. It is shown that, for low doping levels, the layers possess properties with high thermal stability. During annealing, one observes a lowering of the concentration of electrons, a reduction of the lattice periodicity, and a change in the photoluminescence spectra of strongly-doped layers, which is explained by the process of the formation of complexes and by the decomposition of supersaturated solid solutions of impurity dopants.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    I. A. Bobrovnikova, M. D. Vilisova, O. M. Ivleva, V. A. Moskovkin, L. P. Porokhovnichenko & M. V. Turshatova

Authors
  1. I. A. Bobrovnikova
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  2. M. D. Vilisova
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  3. O. M. Ivleva
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  4. V. A. Moskovkin
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  5. L. P. Porokhovnichenko
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  6. M. V. Turshatova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 54–59, January, 1989.

The authors express gratitude to M. P. Yakuben for x-ray topographical studies.

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Bobrovnikova, I.A., Vilisova, M.D., Ivleva, O.M. et al. Influence of thermal processing on the properties of Sn-doped GaAs epitaxial layers. Soviet Physics Journal 32, 44–48 (1989). https://doi.org/10.1007/BF00896733

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  • DOI: https://doi.org/10.1007/BF00896733

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