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Effect of pressure on the thermo-electromotive force of highly doped and compensated CdSnAs2〈Cu〉 with a deep acceptor level

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

For a fixed temperature of 300 K on a specimen of CdSnAs2〈Cu〉 acted upon by a uniform pressure of up to 1.5 GPa, the dependence of the thermo-electromotive force on the “narrow” band population is studied for the first time. In agreement with theory, the sign of the thermo-electromotive force is observed to change sign in the studied crystals. The limits of the validity of the “narrow” band approximation are refined.

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Authors and Affiliations

  1. M. Gor'kii Nizhegorod Teachers' College, USSR

    M. I. Daunov, A. B. Magomedov & V. I. Danilov

  2. Institute of Physics, Dagestan Branch, Academy of Sciences of the USSR, USSR

    M. I. Daunov, A. B. Magomedov & V. I. Danilov

Authors
  1. M. I. Daunov
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  2. A. B. Magomedov
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  3. V. I. Danilov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 116–119, September, 1991.

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Daunov, M.I., Magomedov, A.B. & Danilov, V.I. Effect of pressure on the thermo-electromotive force of highly doped and compensated CdSnAs2〈Cu〉 with a deep acceptor level. Soviet Physics Journal 34, 841–844 (1991). https://doi.org/10.1007/BF00896724

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  • DOI: https://doi.org/10.1007/BF00896724

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