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Soviet Physics Journal

, Volume 31, Issue 1, pp 58–62 | Cite as

Influence of laser exposure on the luminescent properties of GaP∶S monocrystals

  • P. K. Kashkarov
  • Yu. V. Zenkov
  • A. V. Zoteev
Physics of Semiconductors and Dielectrics
  • 14 Downloads

Conclusions

  1. 1.

    The action of laser radiation of both the visible and UV bands on the surface of GaP monocrystals results in quenching of PL because of generation of centers of irradiative recombination.

     
  2. 2.

    In addition to quenching of the initial 1.78 eV line under the effects of laser pulses with energies exceeding a certain threshold value, a new band with a maximum at 2.04 eV occurs.

     

Keywords

Radiation Recombination Laser Pulse Laser Radiation Luminescent Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • P. K. Kashkarov
    • 1
  • Yu. V. Zenkov
    • 1
  • A. V. Zoteev
    • 1
  1. 1.M. V. Lomonosov Moscow State UniversityUSSR

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