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Influence of laser exposure on the luminescent properties of GaP∶S monocrystals

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Conclusions

  1. 1.

    The action of laser radiation of both the visible and UV bands on the surface of GaP monocrystals results in quenching of PL because of generation of centers of irradiative recombination.

  2. 2.

    In addition to quenching of the initial 1.78 eV line under the effects of laser pulses with energies exceeding a certain threshold value, a new band with a maximum at 2.04 eV occurs.

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Author information

Authors and Affiliations

  1. M. V. Lomonosov Moscow State University, USSR

    P. K. Kashkarov, Yu. V. Zenkov & A. V. Zoteev

Authors
  1. P. K. Kashkarov
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  2. Yu. V. Zenkov
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  3. A. V. Zoteev
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 66–70, January, 1988.

The authors are deeply grateful to V. F. Kiselev for discussing the results, and also to M. S. Dzhidzhoev and V. K. Popov for irradiating the specimens by an excimer laser.

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Kashkarov, P.K., Zenkov, Y.V. & Zoteev, A.V. Influence of laser exposure on the luminescent properties of GaP∶S monocrystals. Soviet Physics Journal 31, 58–62 (1988). https://doi.org/10.1007/BF00896688

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  • DOI: https://doi.org/10.1007/BF00896688

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