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Soviet Physics Journal

, Volume 23, Issue 12, pp 1042–1046 | Cite as

Computer simulation of epitaxial growth of gallium arsenide films

  • L. N. Aleksandrov
  • A. N. Kogan
  • V. I. D'yakonova
  • N. P. Trostina
  • R. V. Bochkova
Article

Keywords

Computer Simulation Gallium Epitaxial Growth Arsenide Gallium Arsenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • L. N. Aleksandrov
    • 1
  • A. N. Kogan
    • 1
  • V. I. D'yakonova
    • 1
  • N. P. Trostina
    • 1
  • R. V. Bochkova
    • 1
  1. 1.Institute of Semiconductor PhysicsSiberian Branch of the Academy of Sciences of the USSRNovosibirsk

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