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Investigation of the influence of the bias applied to phase electrodes on the thermal generation currents in charge-coupled devices

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Abstract

A study was made of the kinetics of thermal generation currents and of their dependence on the bias voltage applied to phase electrodes. A mechanism is proposed to explain the observed phenomena. The surface recombination velocity and the lifetime of the minority carriers are determined.

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Literature cited

  1. G. F. Amelio, M. F. Tompsett, and G. E. Smith, Bell. Syst. Tech. J.,49, 593 (1970).

    Google Scholar 

  2. D. E. Ong and P. F. Pirret, IEEE Trans. Electron Devices,ED-22, 593 (1975).

    Google Scholar 

  3. Kh. I. Klyaus, Yu. N. Serdyuk, and E. I. Cherepov, Sixth All-Union Conf. on Physics of Surface Phenomena in Semiconductors [in Russian], Part 2, Naukova Dumka, Kiev (1977), p. 23.

    Google Scholar 

  4. A. V. Rzhanov (ed.), Properties of Metal-Insulator-Semiconductor Structures [in Russian], Izd. Nauka, Moscow (1976).

    Google Scholar 

  5. A. S. Grove and T. J. Fitzgerald, Solid-State Electron.,9, 783 (1966).

    Google Scholar 

  6. T. W. Gollins and J. N. Churchill, IEEE Trans. Electron Devices,ED-22, 90 (1975).

    Google Scholar 

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 14–18, December, 1980.

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Blokh, M.D., Klyaus, K.I., Serdyuk, Y.N. et al. Investigation of the influence of the bias applied to phase electrodes on the thermal generation currents in charge-coupled devices. Soviet Physics Journal 23, 995–998 (1980). https://doi.org/10.1007/BF00896440

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  • DOI: https://doi.org/10.1007/BF00896440

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