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The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon

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Abstract

Ion-implanted high ohmic resistors may exhibit a low temperature coefficient, if the annealing after implantation is not complete. This effect is explained by deep energy levels. Experimental results are presented for B+- and Al+-implanted resistors.

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Authors and Affiliations

  1. Forschungslaboratorien der Siemens AG, D-8000, München 80, Germany

    H. Runge & E. F. Krimmel

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  1. H. Runge
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  2. E. F. Krimmel
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Runge, H., Krimmel, E.F. The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon. Appl. Phys. 10, 181–185 (1976). https://doi.org/10.1007/BF00896337

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  • DOI: https://doi.org/10.1007/BF00896337

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