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Applied physics

, Volume 10, Issue 2, pp 181–185 | Cite as

The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon

  • H. Runge
  • E. F. Krimmel
Contributed Papers

Abstract

Ion-implanted high ohmic resistors may exhibit a low temperature coefficient, if the annealing after implantation is not complete. This effect is explained by deep energy levels. Experimental results are presented for B+- and Al+-implanted resistors.

PACS Codes

71.55 85.30 

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Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • H. Runge
    • 1
  • E. F. Krimmel
    • 1
  1. 1.Forschungslaboratorien der Siemens AGMünchen 80Germany

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