Investigation of the structure and properties of sulfur-doped expitaxial gallium arsenide layers

Conclusion

The electrophysical properties, the lattice constant, and the structure of sulfur doped epitaxial gallium arsenide layers were investigated using a complex of methods. The experimental data indicate that the sulfur atoms can exist in the GaAs lattice simultaneously in the number of states, namely, in the form of substitutional and interstitial solid solutions, as well as in the form of presegregations or second phase segregations. The concentration of interstitial sulfur atoms increases with the overall-sulfur content in the layers. At the maximum sulfur doping level second phase segregations are formed in the layers, which leads to an anamolous decrease in the lattice constant and the electron mobility.