Soviet Physics Journal

, Volume 28, Issue 7, pp 539–542 | Cite as

Liquid epitaxy growth of InP layers

  • L. F. Zakharenkov
  • I. A. Kuz'min
  • B. E. Samorukov
  • M. A. Sokolova
Physics of Semiconductors and Dielectrics


This paper is concerned with the investigation of the process of liquid epitaxy of indium phosphide. The growth of epitaxial InP layers on (100), (111)In and (111) P oriented substrates is studied. It is shown that layers with best surface morphology are obtained on (111)In and (100) faces. The electrical parameteus of the nondoped material are preferable in layers grown on (111) In. It is shown that growth from supercooled solutions-melts leads to a considerable reduction in the thickness of the layers, an improvement in the quality of the epitaxial layer (EL) surface, and a rise in their reproducibility.


Indium Surface Morphology Epitaxial Layer Considerable Reduction Indium Phosphide 
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Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • L. F. Zakharenkov
    • 1
  • I. A. Kuz'min
    • 1
  • B. E. Samorukov
    • 1
  • M. A. Sokolova
    • 1
  1. 1.M. I. Kalinin Leningrad Polytechnical InstituteUSSR

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