Abstract
The spectral dependence of the absorption edge in As2S3 thin films is determined by the photoelectric method. It is shown that photostructural transformations lead to a decrease in the slope of the Urbach edge. This fact is explained by a change in the density of localized states in the tails of the bands as the result of the appearance of additional centers during irradiation of the film. On the basis of the experimental results, we make an estimate of the concentration of such defect centers.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 12–16, July, 1985.
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Babacheva, M., Baranovskii, S.D., Lyubin, V.M. et al. Reversible change in the urbach absorption edge in chalcogenides of glassy semiconductors during photostructural transformations. Soviet Physics Journal 28, 532–535 (1985). https://doi.org/10.1007/BF00896176
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DOI: https://doi.org/10.1007/BF00896176