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Photoelectric and electrophysical characteristics of In2S3-SiOx-Si Structures

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

Results are presented of the investigation of the effect of two oxidation methods of silicon (chemical and anodic) on the electrophysical properties of In21S3-SiOx-Si structures. It is shown that the change in the potential barrier height in silicon and the properties of the interface depend on the oxidation method. In the development of solar energy photoconverters, preference should be given to structures on n-type silicon with chemical oxide.

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Authors and Affiliations

  1. T. G. Shevchenko Kiev State University, USSR

    S. S. Kil'chitskaya, T. S. Kil'chitskaya & A. S. Chernova

Authors
  1. S. S. Kil'chitskaya
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  2. T. S. Kil'chitskaya
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  3. A. S. Chernova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 3–6, July, 1985.

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Kil'chitskaya, S.S., Kil'chitskaya, T.S. & Chernova, A.S. Photoelectric and electrophysical characteristics of In2S3-SiOx-Si Structures. Soviet Physics Journal 28, 525–527 (1985). https://doi.org/10.1007/BF00896174

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  • DOI: https://doi.org/10.1007/BF00896174

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