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Soviet Physics Journal

, Volume 23, Issue 11, pp 977–979 | Cite as

Magnetic quenching of positronium in semiconductors

  • A. Z. Varisov
  • E. P. Prokop'ev
Article
  • 15 Downloads

Abstract

The positronium-determined characteristics of electron-positron annihilation in semiconductors in the presence of an external magnetic field are calculated. It is assumed that the positronium atoms can be in one of two states, delocalized or localized (at defects), and undergo not only pick-off annihilation but also orthoparaconversion (3S11S0) on free carriers. Numerical calculations were made for a field H=15 kG. The field has very different effects on localized and delocalized positronium, and in the first case the effect depends strongly on the nature of the defect.

Keywords

Magnetic Field Numerical Calculation External Magnetic Field Free Carrier Positronium Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • A. Z. Varisov
    • 1
  • E. P. Prokop'ev
    • 1
  1. 1.Pedagogical InstituteBir

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