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Free energy and singularity of ferroelectric BixSb1−xSI solid-solution semiconductors

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Abstract

The temperature dependences of the permittivity (ε) and spontaneous polarization (Ps) measured at high pressures for BixSb1−xSI crystals were used to calculate the coefficients (α,β,γ) of the thermodynamic expansion and to plot the dependences of the free energy on the polarization [ ΔF(Ps) ] for various values of p and x. An, analysis was made of the influence of pressure and isomorphous substitution of the components on the nature of phase transitions in BixSb1−xSI solid solutions.

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Authors and Affiliations

  1. State University, Uzhgorod

    A. P. Buturlakin, E. I. Gerzanich & D. V. Chepur

Authors
  1. A. P. Buturlakin
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  2. E. I. Gerzanich
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  3. D. V. Chepur
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 29–33, November, 1980.

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Buturlakin, A.P., Gerzanich, E.I. & Chepur, D.V. Free energy and singularity of ferroelectric BixSb1−xSI solid-solution semiconductors. Soviet Physics Journal 23, 936–939 (1980). https://doi.org/10.1007/BF00896162

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  • DOI: https://doi.org/10.1007/BF00896162

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