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1/f noise in varistors

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Abstract

An experimental investigation was made of low-frequency fluctuations of the open-circuit voltage of mass-produced Varistors made of silicon carbide. It was concluded that the main charge transport mechanism in varistors may be the Frenkel ionization of impurities.

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Authors and Affiliations

  1. State University, Tbilisi

    A. G. Golovko

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  1. A. G. Golovko
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 11–15, November, 1980.

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Golovko, A.G. 1/f noise in varistors. Soviet Physics Journal 23, 920–923 (1980). https://doi.org/10.1007/BF00896158

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  • DOI: https://doi.org/10.1007/BF00896158

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