Soviet Physics Journal

, Volume 23, Issue 11, pp 920–923 | Cite as

1/f noise in varistors

  • A. G. Golovko
Article

Abstract

An experimental investigation was made of low-frequency fluctuations of the open-circuit voltage of mass-produced Varistors made of silicon carbide. It was concluded that the main charge transport mechanism in varistors may be the Frenkel ionization of impurities.

Keywords

Silicon Carbide Experimental Investigation Silicon Carbide Transport Mechanism 

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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • A. G. Golovko
    • 1
  1. 1.State UniversityTbilisi

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