Soviet Physics Journal

, Volume 23, Issue 11, pp 920–923 | Cite as

1/f noise in varistors

  • A. G. Golovko


An experimental investigation was made of low-frequency fluctuations of the open-circuit voltage of mass-produced Varistors made of silicon carbide. It was concluded that the main charge transport mechanism in varistors may be the Frenkel ionization of impurities.


Silicon Carbide Experimental Investigation Silicon Carbide Transport Mechanism 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature cited

  1. 1.
    A. van der Ziel, Noise: Sources, Characterization, Measurement, Prentice-Hall, Englewood Cliffs, N.J. (1954).Google Scholar
  2. 2.
    L. I. Trusov and V. A. Kholmyanskii, Island Metal Films [in Russian], Metallurgiya, Moscow (1973).Google Scholar
  3. 3.
    V. V. Pasynkov, G. A. Savel'ev, and L. K. Chirkin, Nonlinear Semiconductor Resistors and Their Applications [in Russian], Sudpromgiz, Moscow (1962).Google Scholar
  4. 4.
    Yu. S. Karpov, B. Yu. Lototskii, Yu. T. Okunev, V. V. Pasynkov, and L. K. Chirkin, “Varistors,” in: Poluprovodn. Prib. Ikh Primen., No.23, 305 (1970).Google Scholar
  5. 5.
    A. G. Golovko and T. D. Shermergor, Fiz. Tekh. Poluprovodn.,7, 1353 (1974).Google Scholar
  6. 6.
    G. Ya. Mirskii, Instrumental Determination of the Characteristics of Random Processes [in Russian], Energiya, Moscow (1972).Google Scholar
  7. 7.
    A. G. Golovko, Izv. Vyssh. Uchebn. Zaved. Radiofiz.,10, 1531 (1978).Google Scholar
  8. 8.
    A. G. Golovko, Fiz. Tekh. Poluprovodn.,9, 1840 (1978).Google Scholar
  9. 9.
    A. G. Golovko, Fiz. Tekh. Poluprovodn.,12, 2382 (1978).Google Scholar
  10. 10.
    A. G. Golovko, Method for the Determination of Electrical Properties of Semiconductors, Author's Certificate No. 600482, Byull. Izobret. Tov. Znakov, No. 12 (1978).Google Scholar
  11. 11.
    A. G. Golovko, Method of Determination of Impurity Concentration in Semiconductors, Author's Certificate No. 566277, Publ. in Byull. Izobret. Tov. Znakov, No. 27 (1977).Google Scholar
  12. 12.
    A. G. Golovko and T. D. Shermergor, Method of Determination of the Saturation Current of p-n Junctions and Schottky Barriers, Author's Certificate No. 555814 [in Russian], Publ. in Byull. Izobret. Tov. Znakov, No. 15 (1977).Google Scholar
  13. 13.
    P. S. Kireev, Physics of Semiconductors [in Russian], Vysshaya Shkola, Moscow (1975).Google Scholar
  14. 14.
    H. K. Henisch and R. Roy (eds.), Proc. Intern. Conf. on Silicon Carbide, University Park, Pa., 1968, Publ. by Pergamon Press, Oxford (1969).Google Scholar

Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • A. G. Golovko
    • 1
  1. 1.State UniversityTbilisi

Personalised recommendations