Implantation doping of germanium with Sb, As, and P
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The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD Sb=1.8×10−13 cm2/s,D As=9×10−14 cm2/s andD P=4×10−14 cm2/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO2 layer.
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