Abstract
Photosensitivity spectra of heterojunctions on the basis of SnO2 layers and n- and p-type conductivity CdGeP2 crystals are investigated in natural and linearly polarized radiation in the 160–360 K temperature range. Temperature coefficients of the change in interband energies of A- and B-junctions are determined. The temperature dependence of the photosensitivity of the obtained n-n and n-p-heterojunctions is studied.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 23–27, July, 1989.
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Lunev, A.V., Rud', Y.V., Tairov, M.A. et al. Investigation of heterojunctions in the system SnO2-CdGeP2 . Soviet Physics Journal 32, 520–524 (1989). https://doi.org/10.1007/BF00896123
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DOI: https://doi.org/10.1007/BF00896123