Soviet Physics Journal

, Volume 31, Issue 9, pp 764–767 | Cite as

Effect of a change in the intermediate layer accompanying deposition of metal on the electrophysical properties of a metal-semiconductor contact

  • S. S. Kil'chitskaya
  • S. V. Litvinenko
  • V. A. Skryshevskii
  • V. I. Strikha
  • V. P. Tolstoi
Physics of Semiconductors and Dielectrics


Comparative studies, by the method of IR spectroscopy, of the reflection-absorption properties of oxide layers and the electrophysical characteristics of Ti-SiOx-Si contacts were performed. It is shown that electron-beam deposition of Ti on a heated SiOx-Si substrate gives a thinner layer of silicon oxide and leads to the formation of titanium oxide at the interface. The changes observed, based on the IR spectra, in the properties of the oxide layers as a function of the substrate temperature and the method of oxidation permit drawing conclusions regarding the predominant mechanisms for the passage of majority and minority charge carriers in the contact.


Oxide Silicon Titanium Thin Layer Charge Carrier 
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Literature cited

  1. 1.
    R. Singh, M. A. Green, and K. Rajkanan, Solar Cells,3, No. 2, 95–148 (1981).Google Scholar
  2. 2.
    S. M. Sze, Physics of Semiconductor Devices, Wiley, New York (1969).Google Scholar
  3. 3.
    S. S. Kil'chitskaya et al., Geliotekhnika, No. 3, 17–19 (1983).Google Scholar
  4. 4.
    I. V. Belousov et al., Vestn. Kiev. Univ., Fiz., No. 24, 93–96 (1983).Google Scholar
  5. 5.
    V. P. Tolstoi and V. N. Krylov, Opt. Spektrosk.,55 No. 6, 1066–1069 (1983).Google Scholar
  6. 6.
    V. K. Adamchuk and V. V. Afanas'ev, Fiz. Tverd. Tela,36, No. 8, 2508–2510 (1984).Google Scholar
  7. 7.
    M. A. Taubenblatt and C. R. Helms, J. Appl. Phys.,53, No. 9, 6308–6315 (1982).Google Scholar
  8. 8.
    V. N. Kondrat'ev (ed.), Chemical Bond Strengths. Ionization Potentials and Electron Affinity [in Russian], Nauka, Moscow (1974).Google Scholar
  9. 9.
    V. I. Strikha, Theoretical Foundations of the Operation of a Metal-Semiconductor Contact [in Russian], Naukova Dumka, Kiev (1974).Google Scholar
  10. 10.
    O. S. Zinets, S. S. Kil'chitskaya, and V. I. Strikha, Geliotekhnika, No. 6, 8–13 (1984).Google Scholar
  11. 11.
    M. Green (ed.), Solid State Surface Science, Dekker, New York (1969).Google Scholar
  12. 12.
    Ya. T. Goroshchenko, Chemistry of Titanium [in Russian], Naukova Dumka, Kiev (1970), p. 415.Google Scholar

Copyright information

© Plenum Publishing Corporation 1989

Authors and Affiliations

  • S. S. Kil'chitskaya
    • 1
  • S. V. Litvinenko
    • 1
  • V. A. Skryshevskii
    • 1
  • V. I. Strikha
    • 1
  • V. P. Tolstoi
    • 1
  1. 1.T. G. Shevchenko Kiev State UniversityUSSR

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