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Soviet Physics Journal

, Volume 31, Issue 9, pp 764–767 | Cite as

Effect of a change in the intermediate layer accompanying deposition of metal on the electrophysical properties of a metal-semiconductor contact

  • S. S. Kil'chitskaya
  • S. V. Litvinenko
  • V. A. Skryshevskii
  • V. I. Strikha
  • V. P. Tolstoi
Physics of Semiconductors and Dielectrics
  • 9 Downloads

Abstract

Comparative studies, by the method of IR spectroscopy, of the reflection-absorption properties of oxide layers and the electrophysical characteristics of Ti-SiOx-Si contacts were performed. It is shown that electron-beam deposition of Ti on a heated SiOx-Si substrate gives a thinner layer of silicon oxide and leads to the formation of titanium oxide at the interface. The changes observed, based on the IR spectra, in the properties of the oxide layers as a function of the substrate temperature and the method of oxidation permit drawing conclusions regarding the predominant mechanisms for the passage of majority and minority charge carriers in the contact.

Keywords

Oxide Silicon Titanium Thin Layer Charge Carrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1989

Authors and Affiliations

  • S. S. Kil'chitskaya
    • 1
  • S. V. Litvinenko
    • 1
  • V. A. Skryshevskii
    • 1
  • V. I. Strikha
    • 1
  • V. P. Tolstoi
    • 1
  1. 1.T. G. Shevchenko Kiev State UniversityUSSR

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