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Soviet Physics Journal

, Volume 31, Issue 9, pp 756–758 | Cite as

Estimate of the crystallization factor of epitaxial layers of semiconducting solid solutions

  • A. A. Selin
  • V. A. Trushnikov
Physics of Semiconductors and Dielectrics
  • 11 Downloads

Abstract

An estimate of the layer thickness of multicomponent solid solutions grown by the liquid-phase epitaxy (LPE) method can be obtained simply by using magnitudes of the crystallization factor. Values of the crystallization factor were computed for the system GaInPAs/InP by numerical methods for different compositions and the temperature range 873–973 K. Epitaxial layers of GaInPAs were grown by the method of cooling a preliminarily supercooled melt for an experimental verification of the computation. Results of the computation are sufficiently close to experimental and literature data, except for the domain of spinodal dissociation at low temperatures.

Keywords

Crystallization Solid Solution Layer Thickness Epitaxial Layer Experimental Verification 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1989

Authors and Affiliations

  • A. A. Selin
    • 1
  • V. A. Trushnikov
    • 1
  1. 1.Moscow Institute of Electronic EngineeringUSSR

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